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Realistic Simulations on Reverse Junction Characteristics of SiC and GaN Power Semiconductor Devices
Guannan Wei  Yung C. Liang  Ganesh S. Samudra
Vol. 12, No. 1, pp. 19-23, Jan. 2012
10.6113/JPE.2012.12.1.19

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  ISSN : 1598 - 2092
eISSN : 2093 - 4718